Dataset for the article "Forming and Compliance-free Operation of Low-energy, Fast-switching HfO_xS_y/HfS₂ Memristors"

<p dir="ltr">Dataset for the manuscript "Forming and Compliance-free Operation of Low-energy, Fast-switching HfO_xS_y/HfS₂ Memristors" by Aferdita Xhameni et al. </p><p dir="ltr">The dataset is split in two folders containing the data shown in the main manuscript and in the supplementary information respectively. Within each folder, data are organized in sub-folders corresponding to the figures in the article. </p><p dir="ltr">The dataset includes: </p><ol><li>All the raw electrical data (pulsed switching, switching cycles, retention, etc.) of the experimental resistive memories shown in the paper. The data have been acquired via a Keysight B1500 parameter analyzer equipped with remote sensing units (waveform generator/ fast measurement unit) and a Keysight P9243a oscilloscope.</li><li>Simulated current-voltage (I-V) characteristics of HfO_x and HfO_x/HfS₂ memristors generated by using Synopsys Sentaurus TCAD. <br></li></ol><p></p>