<p dir="ltr">This dataset comprises experimental results on electron transport in two-dimensional electron gases formed in two quantum wells separated by a 30 nm barrier in GaAs/AlGaAs heterostructures. The data represent four-terminal magnetoresistance and magnetocapacitance measurements, obtained using lock-in amplifiers as a function of carrier density and the applied magnetic field. All measurements were conducted in a cryogen-free dilution refrigerator. The measurements of the capacitance as a function of varying magnetic fields at total integer filling factors reveal that when both layers operate in the quantum Hall effect regime, the magnetocapacitance demonstrates anticoercive hysteresis. The change in electron density linked to the hysteresis significantly surpasses that associated with equilibrium interlayer charge transfer, indicating that hysteresis and interlayer charge transfer arise from distinct phenomena. </p><p dir="ltr">The dataset included here forms part of the research work that has been accepted for publication in Physical Review B.</p><p dir="ltr">https://doi.org/10.1103/4gbr-6kbs</p><p dir="ltr"><br></p>
Funding
The work is funded by the United Kingdom Research and Innovation (UKRI), Future Leaders Fellowship (Refer
ences: MR/S015728/1; MR/X006077/1), the Engineering and Physical Sciences Research Council (EPSRC), and the Royal Society.